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 STTH16R04C
Ultrafast recovery diode
Main product characteristics
IF(AV) VRRM Tj VF (typ) trr (typ) 2X8A 400 V 175 C 0.9 V
A2 A2 A1 K
A1 A2
K
25 ns
A1
K
Features and benefits

TO-220AB STTH16R04CT
TO-220FPAB STTH16R04CFP
Very low switching losses High frequency and/or high pulsed current operation High junction temperature Insulated package: - TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF
A1 K
A2
D2PAK STTH16R04CG
Description
The STTH16R04C series uses ST's new 400 V planar Pt doping technology. The STTH16R04C is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.
Order codes
Part Number STTH16R04CT STTH16R04CG STTH16R04CG-TR STTH16R04CFP Marking STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CFP
March 2007
Rev 1
1/10
www.st.com
Characteristics
STTH16R04C
1
Table 1.
Symbol VRRM IF(RMS)
Characteristics
Absolute ratings (limiting values at 25 C, unless otherwise specified)
Parameter Repetitive peak reverse voltage RMS forward current TO-220AB / D2PAK IF(AV) Average forward current, = 0.5 TO-220FPAB IFSM Tstg Tj Per diode Tc = 150 C Per device Tc = 145 C Per diode Tc = 125 C Per device Tc = 90 C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature range Value 400 30 8 16 A 8 16 120 -65 to +175 -40 to +175 A C C Unit V A
Table 2.
Symbol
Thermal parameters
Parameter TO-220AC / D2PAK Per diode Per device Value 2 1.15 C/W Per diode TO-220FPAB per device TO-220AC / D2PAK Per device per device 3.8 0.3 C/W TO-220FPAB 3 4.6 Unit
Rth(j-c)
Junction to case
Rth(c)
Coupling
When the diodes are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
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STTH16R04C Table 3.
Symbol IR(1)
Characteristics Static electrical characteristics
Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 100 C VF(2) Forward voltage drop Tj = 150 C Tj = 25 C Tj = 100 C Tj = 150 C IF = 16 A 1.25 1.12 IF = 8 A 1.05 0.9 VR = VRRM Min Typ Max 10 A 10 100 1.5 1.3 1.1 V 1.75 1.55 1.37 Unit
1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 %
To evaluate the conduction losses use the following equation: P = 0.83 x IF(AV) + 0.034 x IF2(RMS) Table 4.
Symbol
Dynamic characteristics
Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 8 A, dIF/dt = -200 A/s, VR = 320 V, Tj = 125 C IF = 8 A, dIF/dt = -200 A/s, VR = 320 V, Tj = 125 C IF = 8 A, dIF/dt = 100 A/s VFR = 1.1 x VFmax, Tj = 25 C IF = 8 A, dIF/dt = 100 A/s Tj = 25 C 2.9 Min Typ 35 25 5.5 0.4 150 ns V Max 50 ns 35 8 A Unit
trr
Reverse recovery time
IRM S tfr VFP
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Characteristics
STTH16R04C
Figure 1.
P(W)
13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2
Conduction losses versus average current
=0.05 =0.1 =0.2 =0.5 =1
Figure 2.
IFM(A)
Forward voltage drop versus forward current
200 180 160 140 120 100 80 60
T
TJ=150C (Maximum values)
TJ=150C (Typical values)
40
IF(AV)(A) 3 4 5 6 7 8
TJ=25C (Maximum values)
=tp/T
9 10
tp
20 0
11
VFM(V) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
Figure 4.
Relative variation of thermal impedance junction to case versus pulse duration TO-220FPAB
Zth(j-c)/Rth(j-c)
1.0
Single pulse TO-220AB/DPAK
Zth(j-c)/Rth(j-c)
1.0
Single pulse TO-220FPAB
0.1
tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00
tp(s) 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Figure 5.
IRM(A)
IF= 8 A VR=320 V
Peak reverse recovery current versus dIF/dt (typical values)
Figure 6.
tRR(ns)
Reverse recovery time versus dIF/dt (typical values)
IF= 8 A VR=320 V
12 11 10 9 8 7 6 5 4 3 2 1 0
140 120 100 80
Tj=125 C
60 40
Tj=25 C
Tj=125 C Tj=25 C
20
dIF/dt(A/s)
dIF/dt(A/s) 0
1000
10
100
10
100
1000
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STTH16R04C
Characteristics
Figure 7.
Reverse recovery charges versus dIF/dt (typical values)
Figure 8.
Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, eCU = 35 m)
DPAK
200 180 160
QRR(nC)
IF= 8 A VR=320 V
Rth(j-a) (C/W)
80 70 60
140 120 100 80 60 40 20 0 10 100 1000
Tj=25 C Tj=125 C
50 40 30 20 10
dIF/dt(A/s)
0 0 2 4 6 8
SCU(cm) 10 12 14 16 18 20
Figure 9.
Relative variations of dynamic parameters versus junction temperature
Figure 10. Transient peak forward voltage versus dIF/dt (typical values)
VFp(V)
5.0 4.5 4.0
IF=8 A Tj=125 C
1.4 1.2 1.0 0.8 0.6
QRR [Tj]/QRR [Tj = 125 C] and IRM [Tj]/IRM [Tj = 125 C]
IF= 8 A VR=320 V
3.5
IRM
3.0 2.5 2.0
QRR
0.4 0.2 T j(C) 0.0 25 50 75 100 125 150
1.5 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s)
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus (typical values) reverse voltage applied (typical values)
700 600 500 400 300 200 100 0 0 100 200 300 400 500 dIF/dt(A/s)
VR(V) 10 1 10 100 1000
tFR(ns)
IF=8 A VFR=1.1 x V F max. Tj=125C
C(pF)
100
F=1MHz VOSC=30mVRMS Tj=25C
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Package information
STTH16R04C
2
Package information

Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm (TO-220FPAB) / 0.55 Nm (TO-220AB) Maximum torque value: 1.0 Nm (TO-220FPAB) / 0.70 Nm (TO-220AB) D2PAK dimensions
Dimensions Ref. Millimeters Min. A
A E L2 C2
Table 5.
Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 0.393 0.192 0.590 0.050 0.055 0.094 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.409 0.208 0.624 0.055 0.069 0.126
Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 1.40 1.75 3.20
4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 10.00 4.88 15.00 1.27 1.40 2.40
A1 A2 B
D
L L3 A1 B2 B G A2 R
B2 C C2
C
D E G L
M
*
V2
L2 L3 M R V2
* FLAT ZONE NO LESS THAN 2mm
0.40 typ. 0 8
0.016 typ. 0 8
Figure 13. D2PAK footprint (dimensions in mm)
16.90
10.30 1.30
5.08
8.90
3.70
6/10
STTH16R04C Table 6. TO-220AB dimensions
Package information
Dimensions Ref. Millimeters Min. A a1
B OI L F A I4 l3 a1 l2 c2 b2 C
Inches Min. Typ. Max. 0.625 0.147
Typ.
Max.
15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75
15.90 0.598
a2 B b1 b2 C c1 c2
14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147
0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151
a2
e
M
F
c1
b1 e
OI I4 L l2 l3 M
15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066
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Package information Table 7. TO-220FPAB dimensions
STTH16R04C
Dimensions Ref. Millimeters Min. A
A H B
Inches Min. 0.173 0.098 0.098 0.018 0.030 0.045 0.045 0.195 0.094 0.393 Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.205 0.106 0.409
Max. 4.6 2.7 2.75 0.70 1 1.70 1.70 5.20 2.7 10.4
4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10
B D E
Dia L6 L2 L3 L5 F1 L4 F2 D L7
F F1 F2 G G1 H L2
E
16 Typ. 28.6 9.8 2.9 15.9 9.00 3.00 30.6 10.6 3.6 16.4 9.30 3.20
0.63 Typ. 1.126 0.386 0.114 0.626 0.354 0.118 1.205 0.417 0.142 0.646 0.366 0.126
F G1 G
L3 L4 L5 L6 L7 Dia.
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
8/10
STTH16R04C
Ordering information
3
Ordering information
Part Number STTH16R04CT STTH16R04CG STTH16R04CG-TR STTH16R04CFP Marking STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CFP Package TO-220AB D PAK D2PAK TO-220FPAB
2
Weight 1.92 g 1.48 g 1.48 g 1.69 g
Base qty 50 50 1000 50
Delivery mode Tube Tube Tape and reel Tube
4
Revision history
Date 31-Mar-2007 Revision 1 First issue Description of Changes
9/10
STTH16R04C
Please Read Carefully:
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